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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 (Typ.)
1 2 3
SSP7N80A
BVDSS = 800 V RDS(on) = 1.8 ID = 7 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

Value 800 7 4.4
1 O
Units V A A V mJ A mJ V/ns W W/ C
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28 + 30 _ 523 7 16 2.0 160 1.28 - 55 to +150
DataShee
O 1 O 1 O 3 O
2
C
300
Thermal Resistance
Symbol RJC RCS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 0.78 -62.5
Units
C/W
Rev. B
(c)1999 Fairchild Semiconductor Corporation
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SSP7N80A
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units 800 -2.0 -----------------0.93 ------4.95 140 57 23 40 92 34 67 11.2 29.6 --3.5 100 -100 25 250 1.8 -165 66 55 90 195 80 88 --nC ns A pF V V/ C V nA
Test Condition VGS=0V,ID=250A ID=250A VGS=30V VGS=-30V VDS=800V VDS=640V,TC=125 C VGS=10V,ID=0.85A VDS=50V,ID=0.85A
4 O* 4 O
See Fig 7
VDS=5V,ID=250A
1500 1950
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=400V,ID=2A, RG=16 See Fig 13
45 OO
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VDS=640V,VGS=10V, ID=2A See Fig 6 & Fig 12
45 OO
DataShee
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O 4 O
Min. Typ. Max. Units --------520 6.66 7 28 1.4 --A V ns C
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=7A,VGS=0V TJ=25 C,IF=7A diF/dt=100A/s
4 O

Notes ; c Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature e L=20mH, I AS=7A, VDD=50V, R G=27, Starting T J =25 C _ _ 150A/ s, VDD < BVDSS , Starting T J =25 C e ISD < 7A, di/dt < _ e Pulse Test : Pulse Width = 250 s, Duty Cycle <2% _ e Essentially Independent of Operating Temperature

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N-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
[A]
15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 1 10
SSP7N80A
Fig 2. Transfer Characteristics
[A]
1 10
VGS
ID , Drain Current
0 10
ID , Drain Current
0 10
150 oC 25 oC @ Notes : 1. V = 0 V GS 2. V = 50 V DS - 55 oC 3. 250s Pulse Test 8 10
-1 10
@ Notes : 1. 250s Pulse Test 2. T = 25 oC C
0 10 1 10
-1 10
-1 10
2
4
6
VDS , Drain-Source Voltage [V] [A]
VGS , Gate-Source Voltage [V]
RDS(on) , [ ] Drain-Source On-Resistance
Fig 3. On-Resistance vs. Drain Current
5
Fig 4. Source-Drain Diode Forward Voltage
IDR , Reverse Drain Current
4 V = 10 V GS 3
11 0
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2 V = 20 V GS 1
1 0 .com
0
DataShee
1 0 oC 5 2 oC 5 @Nts: oe 1 V =0V . GS 2 2 0 s P l e T s .5 us et 08 . 10 . 12 . 14 .
@ N t : T = 25 oC oe J 0 0 5 10 15 20 25
1 -1 0 02 .
04 .
06 .
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
C = C + C ( C = s o t d) iss gs gd ds h r e C =C +C oss ds gd 20 00 C iss 10 50 C =C rss gd
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
20 50
[pF]
VGS , Gate-Source Voltage
1 0
6 V =10V DS V =40V 0 DS V =60V 4 DS
Capacitance
10 00 @Nts: oe 1 V =0V . GS 2 f=1Mz . H
5
50 0
C oss C rss
@Nts:I =70A oe . D 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0
00 1 0
1 10
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
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SSP7N80A
BVDSS , (Normalized) Drain-Source Breakdown Voltage
1.2
N-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
3.0
RDS(on) , (Normalized) Drain-Source On-Resistance
Fig 7. Breakdown Voltage vs. Temperature
2.5
1.1
2.0
1.0
1.5
1.0 @ Notes : 1. V = 10 V GS 2. I = 3.5 A D 0.0 -75
0.9
@ Notes : 1. V = 0 V GS 2. I = 250 A D
0.5
0.8 -75
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
o TJ , Junction Temperature [ C]
o TJ , Junction Temperature [ C]
Fig 9. Max. Safe Operating Area
[A]
10
2
Fig 10. Max. Drain Current vs. Case Temperature
[A] ID , Drain Current
8
Operation in This Area is Limited by R DS(on) 10 s
ID , Drain Current
6
1 10
100 s 1 ms 10 ms DC
4
0 10
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@ Notes : 1. T = 25 oC C 2. T = 150 C J 3. Single Pulse
o
DataShee
-1 10
2
-2 10
1 10
2 10
3 10
0 25
50
75
100
125
150
VDS , Drain-Source Voltage [V]
Tc , Case Temperature [oC]
Fig 11. Thermal Response
100
Thermal Response
D=0.5 @ Notes : 1. Z J C (t)=0.78 o C/W Max. 2. Duty Factor, D=t/t2 1 0.1 0.05 3. TJ M -TC =PD M *Z J C (t)
0.2 10- 1
Z (t) ,
PDM t1
single pulse
JC
0.02 0.01
t2
10- 2 10- 5
10- 4
10- 3
10- 2
10- 1
100
101
t 1 , Square Wave Pulse Duration
[sec]
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N-CHANNEL POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
SSP7N80A
Current Regulator
50K 12V 200nF 300nF
Same Type as DUT
VGS Qg
10V
VDS VGS DUT
3mA
Qgs
Qgd
R1
Current Sampling (I G) Resistor
R2
Current Sampling (I D) Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL Vout Vout VDD .com
( 0.5 rated V DS )
90%
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RG
Vin
DataShee
DUT 10V Vin
10%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp
ID
RG DUT 10V
tp
ID (t) VDS (t) Time
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SSP7N80A
N-CHANNEL POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS --
IS L Driver RG VGS
Same Type as DUT
VGS
VDD
* dv/dt controlled by RG * IS controlled by Duty Factor D
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VGS ( Driver )
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DataShee
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life .com support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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